Recent Advances in Inorganic Oxide-Based Resistive Random Access Memory: Challenges and Strategies for Practical...

Memory is the backbone of modern computing systems, enabling efficient data storage and functionality. Among emerging nonvolatile memories, resistive random-access memory (RRAM) has garnered significant attention due to its fast switching speed, high scalability, low power consumption, and CMOS compatibility, which makes it suitable for neuromorphic architectures. RRAM operation relies on the history-dependent modulation of resistance in a dielectric layer in response to external stimuli. Recent developments have focused on the wide array of memory-active materials, particularly inorganic and organic compounds, each offering distinct operational modes, tunable switching characteristics, and pathways toward multilevel, low-power, and neuromorphic memory devices. This review summarizes the latest advances in oxide-based RRAM devices, a foundational platform that has driven critical breakthroughs from the initial memristor concept to modern filamentary switching mechanisms. It compares these developments with conventional memory technologies and discusses current challenges and future prospects. Furthermore, we highlight its emerging role in neuromorphic computing, underscoring its potential to revolutionize brain-inspired hardware.