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Published on: March 24, 2019
Phase-transition-driven ferroic response in 2D CuMnP2Se6 under ultra-low electric fields
Jingyan Chen1, Meiling Xu2, Yuntao Jie1
1Jiangsu Key Laboratory of Extreme Multi-Field Materials Physics, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, China.
Researchers discovered novel 2D multiferroics, XMnP2(S/Se)6, enabling low-field electric control of magnetic transitions. This breakthrough paves the way for energy-efficient spintronics and memory devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Low-field electric control of magnetic phase transitions is crucial for energy-efficient spintronics and non-volatile memory.
- Weak magnetoelectric coupling in existing 2D multiferroics limits practical applications.
Purpose of the Study:
- To identify novel 2D multiferroic materials with robust in-plane polarization for enhanced magnetoelectric coupling.
- To investigate the potential for low-field electric control of magnetic properties in these new materials.
Main Methods:
- Crystal structure prediction using computational methods.
- High-throughput first-principles calculations to analyze material properties.
- Investigation of ferroelectric and magnetic phase transitions.
Main Results:
- Identification of four new bimetallic thio(seleno)phosphate multiferroics: XMnP2(S/Se)6 (X = Cu, Au).
- Discovery of robust in-plane spontaneous polarization in these materials, mitigating depolarization effects.
- CuMnP2Se6 exhibits two stable ferroelectric phases with switchable polarization and magnetic order, controllable by electric fields as low as ~0.001 V/Å.
- Achieved a low energy barrier (~49 meV/f.u.) for polarization reversal and magnetic transition, with a magnetoelectric coefficient of ~0.04 G⋅cm/V.
Conclusions:
- The identified 2D multiferroics offer a promising platform for electric-field-driven magnetism.
- These materials demonstrate a viable strategy for realizing practical applications in spintronics and memory devices under feasible conditions.
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