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Updated: Jan 8, 2026

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene
Published on: July 3, 2015
Role of quantum contributions in the magnetoconductance behavior of iridate films at low temperatures
A L Danilyuk1, D A Podryabinkin1, A B Filonov1
1Belarusian State University of Informatics and Radioelectronics, P. Browki 6, Minsk 220013, Belarus. migas@bsuir.by.
Abstract:
The magnetoresistance and Hall resistance of thin epitaxial SrIrO3 films were measured at 2 K and 10 K in magnetic fields of up to 10 T, and negative magnetoresistances of 2-4% were obtained. In order to reproduce and correctly describe the experimental data, the quantum contributions to the magnetoconductivity due to spin splitting, Coulomb interaction, and weak localization/antilocalization for 3D disordered metal systems were estimated for the first time. It was shown that the increase in the magnetoconductivity was mainly caused by weak localization, which was suppressed by the magnetic field, leading to weak anti-localization, and by the phonon-induced electron attraction.
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