Related Experiment Video
Updated: Jan 8, 2026

10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
11.9K
High-energy, strong-field deep-ultraviolet based joule-class amplifier with distributed-faced-cooling chips
Optics Letters
|December 15, 2025
Summary
A new high-energy deep-UV (DUV) laser system was developed using distributed face-cooling (DFC) technology. This system achieves joule-class pulse energy at room temperature, suitable for applications like pulsed laser deposition.
Area of Science:
- Laser Physics
- Materials Science
Background:
- High-energy pulsed lasers are crucial for advanced material processing.
- Existing systems often face thermal management challenges, limiting performance.
Purpose of the Study:
- To develop a high-energy, strong-field deep-UV (DUV) pulse system.
- To leverage distributed face-cooling (DFC) technology for improved thermal management.
Main Methods:
- Utilized a diode-pumped solid-state laser.
- Employed a DFC chip-based, sub-nanosecond, joule-class amplifier with Nd:YAG and sapphire.
- Operated at a 20 Hz repetition rate, with flexible adjustment of pulse energy and repetition rate.
Main Results:
- Achieved a pulse energy of 235 mJ at 266 nm.
- Demonstrated a sub-nanosecond pulse width of 480 ps.
- Reached a peak power of 0.49 GW, comparable to excimer lasers.
Conclusions:
- DFC chip technology enables joule-class pulse energy at room temperature with minimal thermal effects.
- The developed DUV laser system is suitable for pulsed laser deposition applications.
Related Concept Videos
MOSFET Amplifiers
460
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
460
BJT Amplifiers
935
Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
935
Field Effect Transistor
1.1K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.1K
MOSFET: Enhancement Mode
746
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
746
Joule-Thomson Effect
8.9K
The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
8.9K
Maximum Power Transfer
795
Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
By substituting the entire circuit with...
795

