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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Strongly anharmonic flux-tunable transmon based on InAs-Al 2D heterostructure.

Shukai Liu1, Arunav Bordoloi2,3, Jacob Issokson4

  • 1Department of Physics, Joint Quantum Institute, and Quantum Materials Center, University of Maryland, College Park, MD, USA. sliu499@umd.edu.

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|December 15, 2025
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Summary
This summary is machine-generated.

Flux-frustrated gatemon qubits with transparent superconducting-semiconducting junctions exhibit significantly enhanced anharmonicity. This intrinsic property simplifies quantum control and enables high-fidelity operations for quantum information processing.

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Area of Science:

  • Quantum Computing
  • Condensed Matter Physics
  • Superconducting Circuits

Background:

  • Gatemon qubits typically exhibit weak anharmonicity, limiting their performance.
  • Flux frustration in gatemons can enhance anharmonicity through supercurrent harmonic interference.

Purpose of the Study:

  • Investigate enhanced anharmonicity in split-junction gatemon devices using InAs-Al 2D heterostructures.
  • Explore the potential of strong anharmonicity for simplifying quantum control and improving qubit performance.

Main Methods:

  • Fabrication of split-junction gatemon devices based on InAs-Al 2D heterostructures.
  • Flux-dependent spectroscopy to analyze device transitions and extract anharmonicity.
  • Coherent driving of qubits to measure Rabi frequencies.

Main Results:

  • Achieved anharmonicity exceeding 100% at the half-integer flux sweet-spot.
  • Demonstrated coherent qubit driving with raw Rabi frequencies over 100 MHz without pulse shaping.
  • Extracted fine details of the current-phase relation from high-resolution spectroscopy.

Conclusions:

  • Transparent superconducting-semiconducting junctions enable intrinsically large anharmonicity in gatemon qubits.
  • Strong anharmonicity simplifies qubit control and enhances performance, offering advantages over traditional transmons.
  • These anharmonic tunable gatemon qubits are a valuable resource for quantum information processing.