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Updated: May 12, 2026

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Scalable Integration of Lateral van der Waals Heterostructure Arrays via a Self-Aligned Approach.
Jiawen Yan1, Huiyi Zhang2, Yixuan Zou1
1Department of Precision Instruments, Tsinghua University, Beijing 10084, China.
Researchers developed a scalable, self-aligned method for fabricating large arrays of two-dimensional (2D) material lateral van der Waals heterostructures (vdWHs). This breakthrough enables high-performance nano devices with improved characteristics and minimal variation.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- Two-dimensional (2D) material lateral van der Waals heterostructures (vdWHs) are promising for advanced nano devices.
- Current fabrication methods lack nanoscale precision, hindering large-scale production.
Purpose of the Study:
- To develop a scalable, self-aligned fabrication method for 2D material lateral vdWH arrays.
- To demonstrate the performance advantages of these lateral vdWHs compared to vertical counterparts.
Main Methods:
- A self-aligned fabrication technique compatible with semiconductor manufacturing.
- Fabrication of over 800 lateral MoS2/graphene vdWHs on a Si/SiO2 substrate.
Main Results:
- Achieved large-scale fabrication of lateral MoS2/graphene vdWH arrays with high yield and uniformity.
- Lateral vdWH devices exhibited a six-order-of-magnitude reduction in dark current density.
- Demonstrated a three-order-of-magnitude enhancement in the normalized photocurrent-to-dark-current ratio.
Conclusions:
- The developed scalable strategy enables high-performance 2D material lateral vdWH devices.
- This method offers minimal device-to-device variation and excellent imaging performance.
- The approach is extendable to other 2D materials for next-generation functional devices.
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