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van Hove Source for Ultralow Power Field-Effect Transistors.
Baizhe He1, Hang Zhou2, Yuqi Zhuang3
1Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.
ACS Nano
|December 17, 2025
Summary
Researchers developed a novel van Hove source (VHS) field-effect transistor (FET) using carbon nanotubes. This breakthrough achieves a subthreshold swing below the Boltzmann limit, enabling ultralow-power electronics.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Field-effect transistors (FETs) are crucial for integrated circuits.
- Achieving sub-60 mV/decade subthreshold swing (SS) at room temperature is key for ultralow-power electronics.
- Conventional FETs face limitations due to the Boltzmann limit on switching performance.
Purpose of the Study:
- To present a van Hove source (VHS) FET that overcomes the Boltzmann limit.
- To demonstrate steep switching behavior in FETs using one-dimensional (1D) semiconductors.
- To enable next-generation ultralow-power integrated circuits (ICs).
Main Methods:
- Exploiting the steeply declining density of states (DOS) at the van Hove singularity in 1D semiconductors.
- Constructing VHS FETs using individual semiconducting carbon nanotubes (CNTs).
- Electrostatic tuning of the source Fermi level via a control gate.
Main Results:
- Achieved a room temperature SS of 49 mV/decade in VHS FETs.
- Demonstrated comparable on-state current to 22nm silicon FETs at a reduced supply voltage (0.5 V vs 0.75 V).
- VHS FETs exhibited steep switching performance.
Conclusions:
- VHS engineering offers a generalizable pathway for 1D semiconductors to achieve lower SS.
- The developed technology can lead to steep-slope transistors with ultralow power, high performance, and scalability.
- This approach provides a route towards next-generation ultralow-power ICs.
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