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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

517
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
517

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Related Experiment Video

Updated: Jan 8, 2026

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone
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On-chip polarization splitter using total internal reflection mirrors on thick SOI platform.

Shahwar Dura, Mikko Harjanne, Matteo Cherchi

    Optics Express
    |December 19, 2025
    PubMed
    Summary

    Researchers developed wavelength-independent polarization control using compact total internal reflection (TIR) mirrors in silicon waveguides. This breakthrough enables broadband photonic integrated circuits (PICs) and polarization splitters with high extinction ratios.

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    Area of Science:

    • Photonics
    • Materials Science
    • Electrical Engineering

    Background:

    • Broadband photonic integrated circuits (PICs) require wavelength-independent polarization manipulation.
    • Existing methods often struggle with broad wavelength ranges and fabrication tolerances.

    Purpose of the Study:

    • To demonstrate wavelength-independent polarization-dependent phase shifts using compact total internal reflection (TIR) mirrors in silicon waveguides.
    • To develop broadband polarization splitters for PICs.

    Main Methods:

    • Integration of compact total internal reflection (TIR) mirrors within silicon waveguides.
    • Characterization of polarization-dependent phase shifts across a broad wavelength range.
    • Fabrication of a proof-of-concept polarization splitter.

    Main Results:

    • Achieved wavelength-independent polarization-dependent phase shifts, tolerant to fabrication errors.
    • Demonstrated a polarization splitter with a 15 dB polarization extinction ratio over an 80 nm bandwidth for TE and TM polarized light.

    Conclusions:

    • Compact TIR mirrors offer a viable solution for wavelength-independent polarization control in silicon photonics.
    • The developed broadband polarization splitters are key components for integrated silicon photonic devices like isolators and circulators.