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High-efficiency EUV mask defect compensation method based on the pixelated absorber layer correction.

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    A new pixelated defect compensation method enhances extreme ultraviolet (EUV) lithography for advanced semiconductor nodes. This efficient approach improves accuracy and speed for 0.55 NA systems, ensuring mask manufacturability.

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    Area of Science:

    • Semiconductor Manufacturing
    • Advanced Lithography Techniques
    • Nanotechnology

    Background:

    • Extreme ultraviolet (EUV) lithography is critical for fabricating semiconductor devices at 7nm and smaller nodes.
    • The numerical aperture (NA) in EUV lithography is increasing from 0.33 to 0.55, enhancing resolution but exacerbating mask multilayer defect challenges.
    • Existing defect compensation methods for 0.33 NA EUV lithography are inefficient and limited in accuracy due to complex algorithms and simulations.

    Purpose of the Study:

    • To propose a novel, high-efficiency defect compensation method for EUV lithography mask multilayer defects.
    • To address the limitations of current methods in terms of accuracy and efficiency, particularly for advanced 0.55 NA systems.
    • To ensure mask manufacturability while achieving superior defect compensation performance.

    Main Methods:

    • A pixelated absorber layer correction method is introduced.
    • The technique utilizes local light intensity perception and morphological optimization of edge shapes for defect compensation.
    • The proposed method aims for superior performance with a limited number of evaluations.

    Main Results:

    • The proposed method demonstrates superior convergence speed and compensation accuracy compared to existing techniques.
    • Effective defect compensation is achieved across various defect sizes, positions, and pattern types for both 0.33 NA and 0.55 NA EUV lithography.
    • The method maintains mask manufacturability, aligning with the increasing practicality of curvilinear masks.

    Conclusions:

    • The developed pixelated defect compensation method offers a technically feasible and efficient solution for EUV lithography.
    • This approach is expected to significantly benefit volume manufacturing applications for advanced semiconductor nodes.
    • The method's robustness across different conditions makes it suitable for next-generation lithography challenges.