High-efficiency EUV mask defect compensation method based on the pixelated absorber layer correction

Extreme ultraviolet (EUV) lithography is a key technology for 7 nm and smaller nodes. As technology nodes continue to advance, the numerical aperture (NA) of EUV lithography is evolving from 0.33 to 0.55. Although a 0.55 NA provides higher resolution and scaling capability, it also presents more severe challenges in terms of mask multilayer defects. Currently, defect compensation methods for conventional 0.33 NA lithography typically generate Manhattan-style absorber patterns and require complex optimization algorithms with numerous aerial image evaluations and repeated lithography simulations, leading to limitations in both accuracy and efficiency. This paper proposes a high-efficiency defect compensation method based on pixelated absorber layer correction. By perceiving local light intensity and applying morphological optimization to edge shapes, the method achieves superior compensation performance within a limited number of evaluations while maintaining mask manufacturability. Simulation results demonstrate that the proposed method outperforms existing methods in terms of convergence speed and compensation accuracy. It exhibits strong defect compensation capability under both 0.33 NA and 0.55 NA lithography conditions, across various defect sizes, positions, and pattern types. With the development of multi-beam electron beam lithography, curvilinear masks are becoming increasingly practical. This work is expected to provide a technically feasible solution for volume manufacturing applications.