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VN Thin Films via MOCVD Using a New Vanadium Precursor: Linking Growth Chemistry to Functional Surface Properties
Jean-Pierre Glauber1,2, Julian Lorenz3, Ji Liu4
1Institute for Materials Chemistry, Leibniz Institute for Solid State and Materials Research Dresden, 01069, Dresden, Germany.
A new metalorganic chemical vapor deposition (MOCVD) method creates high-quality vanadium nitride (VN) thin films. This advancement is crucial for developing efficient catalysts for the electrochemical nitrogen reduction reaction (eNRR).
Area of Science:
- Materials Science
- Electrochemistry
- Catalysis
Background:
- Vanadium nitride (VN) shows promise for electrochemical nitrogen reduction reaction (eNRR) applications.
- Current synthesis methods for VN catalysts lack precise control, hindering structure-property relationship studies.
Purpose of the Study:
- To develop a controlled synthesis method for high-quality VN thin films.
- To investigate the structure-property relationships of VN for eNRR applications.
Main Methods:
- Metalorganic chemical vapor deposition (MOCVD) using N,N'-diisopropylformamidinatovanadate [V(dpfamd)3] precursor and NH3 co-reactant.
- Characterization techniques: XRD, RBS/NRA, XPS, SEM, TEM.
- First principles density functional theory (DFT) simulations.
Main Results:
- Successfully synthesized pure, crystalline, faceted VN thin films on Si and Ti substrates.
- NH3 was found to be crucial for favorable precursor decomposition and VN formation.
- Preliminary eNRR tests suggest a correlation between film faceting and catalytic activity.
Conclusions:
- The developed MOCVD process offers precise control over VN thin film synthesis.
- MOCVD-grown VN thin films are promising candidates for future eNRR catalyst development.
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