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Updated: Jan 8, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Slip Electron Flow in GaAs Microscale Constrictions
Daniil I Sarypov1,2, Dmitriy A Pokhabov1,2, Arthur G Pogosov1,2
1Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia.
Abstract:
Hydrodynamic electron transport in solids, governed by momentum-conserving electron-electron collisions, offers a unique framework to explore collective phenomena. Within this framework, correlated electron motion is modeled as viscous fluid flow, with viscosity serving as the interaction parameter. Advances in electron hydrodynamics remain constrained by two unresolved issues: the questionable existence of materials with intrinsically smooth boundaries enabling perfect slip in electron fluids and the lack of quantitative experimental confirmation of the theoretical relation linking the viscosity to electron-electron scattering length. Here, we resolve this through measurements of these quantities in the same electron system in GaAs/AlGaAs heterostructure. Our experiments reveal large flow slippage at boundaries of microscale constrictions-an unexpected phenomenon for electron liquid that parallels ultrafast water transport in carbon nanotubes. These findings bridge the fields of electron hydrodynamics and nanofluidics, highlighting the transformative potential of hydrodynamic engineering across condensed matter and fluidic technologies.
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