Blue Light-Emitting Diodes Enabled by Edge-Passivated MoS2 Quantum Sheets
Zhangqiang Li1,2, Guanghan Zhao1,2, Ce Zhao1,2
1CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
Nano Letters
|December 23, 2025
Summary
Edge passivation of molybdenum disulfide (MoS2) quantum sheets using tetrahydrofuran significantly boosts photoluminescence quantum yield (PLQY) to 39.9%. This breakthrough enables the fabrication of efficient blue light-emitting diodes (LEDs) with high external quantum efficiency (EQE).
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Transition metal dichalcogenide (TMD) light-emitting diodes (LEDs) show promise, but their electronic properties require improvement.
- Current methods like defect passivation and heterostructure construction have limitations due to material size and many-body effects.
Purpose of the Study:
- To develop an effective method for passivating edge dangling bonds in molybdenum disulfide (MoS2) quantum sheets.
- To enhance the photoluminescence quantum yield (PLQY) and external quantum efficiency (EQE) of MoS2-based light-emitting devices.
Main Methods:
- Heat treatment of intrinsic MoS2 quantum sheets with tetrahydrofuran to passivate edge dangling bonds.
- Fabrication of blue LEDs utilizing the edge-passivated MoS2.
Main Results:
- Edge passivation prevented nonradiative recombination caused by edge relaxation.
- Achieved an absolute photoluminescence quantum yield (PLQY) of 39.9%.
- Fabricated blue LEDs with a 455 nm emission wavelength and an external quantum efficiency (EQE) of 5.4%.
Conclusions:
- Edge passivation of MoS2 is an efficient strategy for enhancing optical properties.
- This approach paves the way for developing highly efficient photonic applications using TMD quantum dots/sheets (QD/QSs).
- Demonstrated the first report of high-performance LEDs from TMD QD/QSs via edge passivation.
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