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Published on: August 17, 2019
Phase diagram and dynamics of the edge oxidation of C3N monolayers in O2 atmosphere from first-principles
Zhongyue Li1, Nan Zhao1, Haitao Chen1
1College of Physical Science and Technology, Yangzhou University, Jiangsu, 225009, China. htchen@yzu.edu.cn.
Abstract:
The two-dimensional carbon nitride with the stoichiometric formula C3N exhibits higher basal plane reactivity toward gas molecules than graphene. Its edges, which are an inherent feature of experimentally synthesized structures, are expected to be more reactive toward oxygen and offer a promising avenue for improving surface chemistry and electronic properties under oxidative environments. However, the stable edge structures and O2-driven edge oxidation mechanism of the C3N monolayer remain unexplored. With the combination of first-principles calculations and ab initio atomistic thermodynamics, we have identified 135 thermodynamically stable edge oxidation configurations and determined the oxidation phase diagrams over broad ranges of temperature and pressure in O2 atmospheres for four C3N edge types: armchair all-carbon (ACC), armchair mixed carbon-nitrogen (ACN), zigzag all-carbon (ZCC), and zigzag mixed carbon-nitrogen (ZCN). It is demonstrated that all edges are readily oxidized by the atomic O and O2 compared to the C3N basal plane, forming CO, N-O, and nondissociatively chemisorbed O2 species, with ACC and ZCC edges being more susceptible to oxidation than ACN and ZCN edges. Increasing O2 pressure raises the edge oxygen density, leading to the transformation of stable edge oxidation structure from the atomic O-dominant configuration to the mixture of O and the chemisorbed O2 configuration. Using ab initio molecular dynamics simulations, we reveal three distinct edge oxidation mechanisms, including a two-step oxidation, concerted reactions involving two nondissociatively chemisorbed O2, and O3 formation via interaction between an O2 and a nondissociatively chemisorbed O2. These reactions are all spontaneous at room temperature, with the first two being barrierless and the third having a low barrier on the order of thermal fluctuation. Furthermore, the electronic properties can be tuned by the edge oxidation density. This work elucidates the stable oxidized edge structures and oxidation pathways of C3N, highlighting its high edge reactivity and providing a potential strategy for electronic property engineering in carbon nitride materials.
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