Silicon Carbide Neural Interfaces: A Review of Progress Toward Monolithic Devices

The promise of intracortical neural interfaces-to restore lost sensory and motor function and probe the brain's activity-has long been constrained by device instability over chronic implantation. Conventional silicon-based probes, composed of heterogeneous materials, often fail due to mechanical mismatch, inflammatory responses, and interface-driven degradation, where stress can induce cracking, swelling, and exposure of cytotoxic elements to neural tissue. Silicon carbide (SiC) offers a compelling solution, combining chemical inertness, structural strength, and biocompatibility in both amorphous and crystalline forms. In this review, we discuss advances in SiC neural interfaces, highlighting contributions from multiple laboratories and emphasizing our own work on monolithic devices, constructed entirely from a single, homogeneous SiC material system. These devices mitigate interface-driven failures and show preliminary indications of magnetic resonance imaging (MRI) compatibility, with minimal image artifacts observed compared to conventional silicon probes, though further in vivo studies are needed to confirm thermal safety at high-field conditions. Collectively, SiC establishes a versatile platform for next-generation, durable neural interfaces capable of reliable, long-term brain interaction for both scientific and clinical applications.