Bipolar Junction Transistor
Schottky Barrier Diode
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Updated: Jan 7, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Chunyan Liu1, Hong Zhang1, Ke Ding1
1Chongqing Key Laboratory of Photo-Electric Functional Materials and Laser Technology, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, P. R. China.
Researchers developed a self-powered bipolar photodetector using amorphous oxide films. A geometry-engineering strategy precisely balances photocurrents, enabling secure, high-throughput optical communication and advanced logic gates.
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