Engineering the MoO_x/CIGS Interface for Enhanced Performance and Suppressed Recombination in Industrial Modules

Area of Science:

• Materials Science
• Renewable Energy Engineering
• Semiconductor Physics

Background:

• Copper indium gallium selenide (CIGS) thin-film solar cells are a promising photovoltaic technology.
• Interface engineering is crucial for optimizing CIGS solar cell performance and stability.
• Molybdenum oxide (MoO_x) is explored as a passivation layer for the rear interface.

Purpose of the Study:

• To investigate the impact of molybdenum oxide (MoO_x) rear interface passivation on CIGS thin-film solar cells.
• To determine how MoO_x thickness and deposition conditions influence cell performance.
• To understand the mechanisms behind MoO_x passivation effects.

Main Methods:

• Fabrication of CIGS thin-film solar cells with varying MoO_x rear passivation.
• Characterization of MoO_x layer properties (thickness, deposition conditions).
• Electrical performance testing of solar cells and modules, including efficiency, fill factor, and resistance measurements.

Main Results:

• MoO_x passivation effectively suppresses selenium/sulfur diffusion and reduces interfacial voids.
• Optimized MoO_x layers lead to lower series resistance and higher shunt resistance.
• Improved fill factor and current density were observed, enhancing overall cell performance.
• Industrial-scale modules achieved 152.41 W power output and 14.0% efficiency.

Conclusions:

• Molybdenum oxide (MoO_x) is an effective rear interface passivation material for CIGS solar cells.
• Interface engineering with MoO_x significantly improves CIGS solar cell efficiency and manufacturability.
• This study provides a pathway for optimizing MoO_x passivation for advanced photovoltaic applications.