A 3.0-V, High-Precision, High-PSRR BGR with High-Order Compensation and Improved FVF Pre-Regulation

A 3.0 V bandgap reference (BGR) for battery management integrated circuit (BMIC) is presented, achieving a low temperature coefficient (TC) and a high power supply rejection ratio (PSRR). Precision is enhanced through two techniques: (1) a base current correction technique eliminates errors from the bipolar junction transistor (BJT) base current, and (2) a high-order temperature compensation circuit counteracts the inherent nonlinearity of the BJT's base-emitter voltage (V_BE). Furthermore, an improved flipped voltage follower (FVF) pre-regulation structure is integrated for efficient power supply noise suppression. The circuit is designed based on a 180 nm BiCMOS process, occupying a layout area of 0.0459 mm². Post-layout simulation results demonstrate that the BGR achieves a temperature coefficient of 1.59 ppm/°C over the -40 °C to 125 °C temperature range. Within a supply voltage range of 4.7 V to 5.3 V, the line regulation is 0.00058 mV/V. At a 5.0 V supply voltage, the quiescent current is 23 μA, and the PSRR is -128.89 dB@1 Hz and -102.9 dB@1 kHz.