Dynamic Barrier Modulation in Graphene-Diamond Schottky Interfaces for Enhanced Ultraviolet Photodetection

Wide-bandgap diamond photodetectors face a fundamental trade-off between dark current suppression and photocurrent collection due to high Schottky barriers. Here, a photo-modulation strategy is demonstrated by integrating monolayer graphene as transparent electrodes on oxygen-terminated single-crystal diamond. The atomically thin graphene (87.3% UV transmittance at 220 nm) allows photons to penetrate and dynamically reduce Schottky barriers through photoinduced electric fields, while maintaining high barriers (~2.3 eV) under dark conditions for ultralow leakage current. Compared with conventional 100 nm Au electrodes, graphene-based devices exhibit a 4.9-fold responsivity improvement (0.158 A/W at 220 nm) and a 5.2-fold detectivity increase (8.35 × 10¹³ cm·Hz^1/2/W), while preserving ultralow dark current (~10^-12 A at ±100 V). XPS measurements confirm a minimal Fermi level shift (0.06 eV) upon graphene integration, demonstrating robust surface state pinning by oxygen termination. Transient photoresponse reveals a 27% faster rise time (30 ns vs. 41 ns) with bi-exponential decay governed by band-to-band recombination (τ1 ≈ 75 ns) and trap-assisted recombination (τ2 ≈ 411 ns). The devices maintain stable performance after one month of ambient exposure and successfully demonstrate UV optical communication capability. This transparent electrode approach offers a versatile strategy for enhancing wide-bandgap semiconductor photodetectors for secure communications, environmental monitoring, and industrial sensing applications.