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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jan 7, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Vertical Interfacial Engineering in Two-Step-Processed Perovskite Films Enabled by Dual-Interface Modification for

Wenhao Zhou¹, Heng Liu^2,3, Haiyan Li⁴

¹School of New Energy, Ningbo University of Technology, Ningbo, 315211, People's Republic of China.

Nano-Micro Letters

|January 4, 2026

Summary

This summary is machine-generated.

Two-step-processed perovskite solar cells (PSCs) efficiency was limited by residual PbI2 clusters. Dual-interface modification with Sn(OTF)2 and F-PEA improved PSCs, achieving 25.6% power conversion efficiency (PCE).

Keywords:

Energy-level modulation Interface modification Nickle oxide Two-step procession Vertical interfacial engineering

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Last Updated: Jan 7, 2026

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

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Published on: February 27, 2017

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Published on: February 3, 2021

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Area of Science:

Materials Science
Renewable Energy
Semiconductor Physics

Background:

Two-step-processed (TSP) inverted p-i-n perovskite solar cells (PSCs) are promising for tandem applications but face efficiency limitations.
Residual PbI2 clusters in TSP perovskite films create interfacial energy mismatches, hindering performance.

Purpose of the Study:

To address efficiency limitations in TSP p-i-n PSCs by engineering the vertical interfaces.
To investigate the impact of dual-interface modification on perovskite film quality and device performance.

Main Methods:

Vertical interfacial engineering using tin trifluoromethanesulfonate (Sn(OTF)2) at the NiOx/perovskite interface.
Dual-interface modification with 4-Fluorophenylethylamine chloride (F-PEA) at the perovskite/C60 interface.
Characterization of film properties, interfacial energetics, and device performance.

Main Results:

Sn(OTF)2 enhanced NiOx conductivity, suppressed ion migration, and formed a Pb-Sn mixed perovskite interlayer.
F-PEA post-treatment passivated surface defects and improved energy-level alignment by forming a 2D perovskite capping layer.
Optimized TSP p-i-n PSCs achieved a power conversion efficiency (PCE) of 25.6% with enhanced operational stability.

Conclusions:

Dual-interface modification effectively overcomes limitations caused by residual PbI2 clusters in TSP p-i-n PSCs.
The study provides design principles for achieving higher efficiencies in perovskite solar cells.
This work paves the way for developing efficient and stable perovskite solar cells for future energy applications.