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Updated: Jan 7, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Ultrafast carrier dynamics and electronic properties of PtSe2/MoSe2 and WSe2 2D TMDC layered structures on mica:
Y Samet Aytekin1, Céline Vergnaud2, Rahul Sharma2
1Department of Chemistry, Middle East Technical University Ankara Turkey eokan@metu.edu.tr.
Abstract:
A detailed investigation of structure, electronic and optical properties of two transition metal dichalcogenide (TMDC) structures is presented in this study. Sample 1 consists of epitaxially grown bilayer of PtSe2 (2 monolayers) on MoSe2 (1 monolayer) deposited on mica substrate - reported here for the first time. Sample 2 comprises a trilayer of WSe2 grown on mica. The photoconductivities of both samples were characterized using optical pump-terahertz probe spectroscopy under above- and near-bandgap excitations at 400 nm and 800 nm. Both structures exhibit rapid carrier generation and relaxation dynamics, with notable variations depending on excitation wavelength and structures. Complementary density functional theory (DFT) calculations are performed to evaluate the electronic and optical properties of free-standing single layers of MoSe2, PtSe2 and WSe2 and their combined structures corresponding to Sample 1 and Sample 2. The experimental results show strong agreement with calculated band structures. This consistency between experiment and theory underscores the potential of these TMDC structures for future applications in terahertz and high-frequency electronic devices.
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