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Field-effect transistors based on an In2Se3-graphene vdW ferroelectric heterojunction for high-performance and

Miao-Wei Zhao1, Jian-Qing Dai1, Jin Yuan1

  • 1Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China. djqkust@kust.edu.cn.

Physical Chemistry Chemical Physics : PCCP
|January 6, 2026
PubMed
Summary

This study introduces a novel 2D ferroelectric heterojunction FET (FeHJ-FET) using In2Se3/graphene for advanced logic devices. It demonstrates nonvolatile modulation for high-performance, low-power applications, breaking performance limits.

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