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Updated: Jan 13, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Characterization of a 100 nm RADFET as a Proton Beam Detector
J A Moreno-Pérez1, I Ruiz-García2, R Duane3
1PRIMELab, ECsens, Sport and Health University Research Institute (iMUDS), Department of Electronics and Computer Technology, Research Centre for Information and Communications Technologies (CITIC), University of Granada, 18071 Granada, Spain.
Abstract:
The RADFET VT06 developed by Varadis (Cork, Ireland), which is aimed at high-dose applications, mainly for spacecraft missions, has been characterized by low- and high-energy proton beams at two different facilities, the Accelerator National Centre (Sevilla, Spain) and the Paul Scherrer Institute (PSI) located in Villigen (Switzerland), using a reader unit system developed by the University of Granada (Spain). The devices have been characterized with proton energies of 1, 2, 3, 150, and 230 MeV, with accumulated doses from 130 to 512 Gy, where the RADFET was unbiased during the irradiation while the source voltage was measured before and after irradiation to monitor the radiation dose. Excellent linearity has been obtained with a minimum correlation factor R2 of 0.996, with a sensitivity that can vary from (0.691 ± 0.007) mV/Gy for 1 MeV to (1.143 ± 0.023) mV/Gy for 230 MeV without any build-up layer. An excellent stability was found in the studied cases, with dispersion being lower than 4% after a dose accumulation higher than 500 and 200 Gy for protons of 1 and 3 MeV, respectively. The detectors demonstrated linear responses, very low sensitivity dispersion per set of samples, and excellent stability after irradiation. This shows that, with an appropriate readout system, the RADFET can become an excellent system for high-dose proton beams.
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