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Related Concept Videos

Characteristics of JFET01:21

Characteristics of JFET

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Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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Characterization of a 100 nm RADFET as a Proton Beam Detector.

J A Moreno-Pérez1, I Ruiz-García2, R Duane3

  • 1PRIMELab, ECsens, Sport and Health University Research Institute (iMUDS), Department of Electronics and Computer Technology, Research Centre for Information and Communications Technologies (CITIC), University of Granada, 18071 Granada, Spain.

Sensors (Basel, Switzerland)
|January 10, 2026
PubMed
Summary

The RADFET VT06 radiation detector shows excellent linearity and stability for high-dose proton measurements, making it suitable for spacecraft missions. Its performance was validated across various proton energies and doses.

Keywords:
RADFETdosimetryproton beamsradiation detectorunbiased

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Area of Science:

  • Space Science and Engineering
  • Radiation Detection and Measurement
  • Semiconductor Device Physics

Background:

  • Rad-FET (Radiation-Sensitive Field-Effect Transistor) devices are crucial for monitoring radiation doses in harsh environments.
  • Spacecraft missions require reliable dosimeters capable of withstanding high radiation levels.
  • Characterizing new radiation detectors is essential for validating their performance in specific applications.

Purpose of the Study:

  • To characterize the RADFET VT06 for high-dose proton applications, particularly for spacecraft missions.
  • To evaluate the linearity, sensitivity, and stability of the RADFET VT06 under proton irradiation.
  • To assess the suitability of the RADFET VT06 as a dosimeter for high-energy proton beams.

Main Methods:

  • The RADFET VT06 was irradiated with low- and high-energy proton beams (1-230 MeV) at two different accelerator facilities.
  • Accumulated doses ranged from 130 to 512 Gy, with the RADFET unbiased during irradiation.
  • Source voltage was measured before and after irradiation to monitor radiation dose using a specialized reader unit.

Main Results:

  • Excellent linearity was observed, with a minimum correlation factor (R²) of 0.996.
  • Sensitivity varied from (0.691 ± 0.007) mV/Gy at 1 MeV to (1.143 ± 0.023) mV/Gy at 230 MeV.
  • Excellent stability was demonstrated, with dispersion below 4% after high accumulated doses.

Conclusions:

  • The RADFET VT06 exhibits linear responses and low sensitivity dispersion across a range of proton energies.
  • The detector demonstrates excellent stability, making it a reliable option for high-dose proton dosimetry.
  • With an appropriate readout system, the RADFET VT06 is a promising solution for high-dose proton beam monitoring in space applications.