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Meta-device for sensing subwavelength lateral displacement.

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  • 1Department of Electrical Engineering and State Key Laboratory of Optical Quantum Materials, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China.

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We developed a new two-photon state transverse displacement measurement method for lithography. This technique achieves equivalent precision with significantly fewer detected photons, improving measurement speed and suitability for semiconductor manufacturing.

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Area of Science:

  • Metrology
  • Optical Physics
  • Nanotechnology

Background:

  • Accurate transverse displacement measurement is critical for precise mask-to-wafer positioning in semiconductor lithography.
  • Existing lateral displacement metrology methods face challenges in in-situ speed and precision due to coherent state and grating limitations.

Purpose of the Study:

  • To introduce a novel two-photon state transverse displacement measurement method.
  • To enhance measurement speed and precision for semiconductor lithography applications.

Main Methods:

  • Utilizing a polarization gradient metasurface and two-photon state interference.
  • Comparing the new method's performance against classical measurement techniques.

Main Results:

  • The two-photon state method achieved equivalent precision to classical methods while reducing detected photons to approximately 3%.
  • Demonstrated suitability for integration into semiconductor lithography processes.

Conclusions:

  • The two-photon state polarization gradient metasurface approach offers a robust solution for next-generation transverse displacement measurement.
  • This method enables equivalent measurement precision within significantly shorter acquisition durations.