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When electromagnetic radiation passes through a material, atoms or molecules transition from a lower to a higher energy state by absorbing radiation corresponding to the energy difference between the two states. The absorption of infrared (IR) radiation causes transitions between vibrational energy levels in a molecule. Therefore, IR spectroscopy is a useful analytical tool for determining the molecular structure of molecules.
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Related Experiment Video

Updated: Jan 13, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Mid-infrared InAs/InP quantum-dot lasers.

Yangqian Wang1, Hui Jia2, Jae-Seong Park3

  • 1Department of Electronic and Electrical Engineering, University College London, London, UK.

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|January 11, 2026
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Summary
This summary is machine-generated.

Researchers developed new InAs/InP quantum-dot (QD) lasers for mid-infrared applications. These lasers demonstrate efficient room-temperature operation, offering a promising alternative to existing technologies for trace-gas detection and biomedical analysis.

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Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
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Area of Science:

  • Semiconductor physics and optoelectronics.
  • Materials science for novel laser development.

Background:

  • Mid-infrared semiconductor lasers are crucial for trace-gas detection, biomedical analysis, and optical communication.
  • Existing InP-based quantum-well (QW) and quantum-dash (Qdash) lasers face challenges with high threshold current density (Jth) and limited operating temperatures.
  • InAs/InP quantum-dot (QD) lasers offer theoretical advantages due to 3D carrier confinement but achieving high-density, uniform QDs for mid-infrared emission has been difficult.

Purpose of the Study:

  • To demonstrate the first mid-infrared InAs/InP quantum-dot (QD) lasers emitting beyond 2 μm.
  • To investigate the performance characteristics, including threshold current density and operating temperature, of these novel QD lasers.
  • To establish InAs/InP QDs as a viable platform for low-cost, high-performance mid-infrared light sources.

Main Methods:

  • Growth of five-stack InAs/In0.532Ga0.468As/InP quantum dots using molecular-beam epitaxy.
  • Characterization of room-temperature photoluminescence to confirm emission wavelength.
  • Fabrication and testing of edge-emitting lasers to determine lasing performance at 2.018 μm.

Main Results:

  • Achieved room-temperature photoluminescence at 2.04 μm from the InAs/InP QD structures.
  • Demonstrated edge-emitting lasers with lasing at 2.018 μm.
  • Obtained a low threshold current density (Jth) of 589 A/cm² at room temperature.
  • Recorded a maximum operating temperature of 50°C.
  • Reported the lowest Jth per layer (118 A/cm²) for room-temperature InP-based mid-infrared lasers, outperforming QW/Qdash lasers.

Conclusions:

  • Successfully demonstrated the first mid-infrared InAs/InP QD lasers emitting beyond 2 μm.
  • The developed QD lasers exhibit competitive performance, including low threshold current density and viable operating temperatures.
  • These findings represent a significant advancement towards low-cost, high-performance mid-infrared semiconductor lasers based on InAs/InP QDs.