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Updated: Jan 15, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
High-performance self-powered NiO/Ga2O3heterojunction solar-blind photodetector driven by a strong built-in electric
Hao Chen1, Dazheng Chen1, Dinghe Liu1
1State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Faculty of Integrated Circuit, Xidian University, Xi'an, People's Republic of China.
None:
Self-powered solar-blind photodetector offers irreplaceable advantages for applications such as wearable electronics and ultra-low power systems, but their performance is often limited due to the absence of an external bias. In this work, we demonstrate a high-performance self-powered photodetector based on a well-designed NiO/Ga₂O₃ p-i-n heterostructure that requires no complex pre-treatment methods. The photodetector exhibits a high photo-to-dark current ratio of 378, a high responsivity of 137 mA W-1, and fast response times of 27 ms/650 ms. Furthermore, we quantitatively elucidated the physical origin of the self-powered behavior. The analysis of the p+-n-one-sided abrupt junction, based on repeatable capacitance-voltage characterization, confirmed the presence of a strong built-in electric field with a calculated maximum field strength of 136 kV cm-1. It is the fundamental driving force for the photodetector's excellent self-powered performance.
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