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Updated: May 30, 2026

Atomically Traceable Nanostructure Fabrication
Published on: July 17, 2015
A 3D energy deposition model guided by resist activation energy for helium ion beam lithography at its resolution
Yunsheng Deng1, Shiyang Gao2,3, Jingfu Xu2,3
1Pico Center and SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China.
Abstract:
We have conducted a detailed investigation of helium ion beam lithography (HIBL) at its resolution limits by calculating three-dimensional energy deposition within a resist. The resist activation energy, a critical physical parameter, was estimated and used as a substitute for the traditionalz-factor, allowing for a systematic evaluation of interdependent lithography performances. Our calculations demonstrate HIBL's exceptional capabilities, including 2.5 nm resolution (30 kV, PMMA, line-scan), large aspect ratios exceeding 9, a proximity effect range of approximately 10 nm at 100 nm depth, and edge roughness below 1 nm. These findings highlight HIBL's potential for advanced nanofabrication applications. Furthermore, our calculation led to a reliable model for accurate pattern prediction and proximity effect corrections, which was verified by experiment.
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