Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI

Wide bandgap (WBG) semiconductors such as 4 H-SiC MOSFETs are key enablers for next-generation power electronics due to their superior efficiency and high-temperature capability. However, their electrical performance is strongly affected by process variations, and conventional Technology Computer-Aided Design (TCAD) simulations are computationally demanding and difficult to scale. This work presents a novel explainable machine learning framework that integrates artificial neural networks (ANNs) with explainable artificial intelligence (XAI) to enable accurate and interpretable device modeling. The ANN is trained on comprehensive TCAD-generated datasets covering a broad range of structural and doping parameters, while SHapley Additive exPlanations (SHAP) are employed to quantify the influence of each design parameter on electrical characteristics. The proposed model achieves a Pearson correlation coefficient exceeding 0.99 for on-state current prediction, and SHAP analysis reveals physically consistent trends such as the inverse dependence of drain current on oxide thickness and channel length. This study is among the first to apply XAI for interpreting design–performance correlations in SiC MOSFETs, establishing a transparent and data-driven framework for device understanding and optimization. The methodology can be readily extended to other semiconductor technologies where both modeling accuracy and interpretability are essential.