Tuning electrical performance of dual-gate semiconducting graphene field-effect transistor using plasma parameters

This research outlines a simulation-based analysis of dual-gate semiconducting graphene field-effect transistors (GFETs) constructed using vertically aligned synthesized graphene via plasma-enhanced chemical vapor deposition (PECVD) technique. Using SILVACO TCAD software, the study investigates the impact of varying plasma parameters-specifically electron and ion temperatures, and densities-each associated with different graphene channel thicknesses. Distinct combinations of plasma electron/ion temperature and density were investigated; each linked to a specific graphene channel thickness. The study focused on the electrical properties of the dual gate semiconducting GFET, comparing them with the existing experimental observations and correlating these properties with the plasma processing parameters. It was seen that the values of these properties, like drain current,Ion/Ioff current ratio, transconductanceg_m, cutoff frequencyf_c, etc., increased on decreasing the plasma parameters of the PECVD process involved. The relations developed can be used to modulate the properties of plasma-grown GFETs, by scaling them down for industrial use in several concerned sectors of high-frequency circuits, solar cells, supercapacitors and biosensing technologies. These findings provide a theoretical framework to support future experimental validation and process optimization.