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Updated: Jan 18, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Bioinspired TeSeO/InZnO Optoelectronic Synapse for Broadband UV-Visible-NIR Sensing and Multifunctional Reservoir
Li Zhu1,2, Feng Zhang1, Pengyu Chen1
1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications. Nanjing 210023, China.
Abstract:
Neuromorphic visual systems, integrating broadband optical perception, memory, and computation, offer a promising pathway toward next-generation intelligent sensing and brain-inspired computing. Here, we report a TeSeO/InZnO heterojunction optoelectronic synaptic transistor that leverages a narrow-bandgap/wide-bandgap coupling strategy to achieve broadband photoresponse spanning from UV to NIR (360-1550 nm). Under UV-visible-NIR illumination, the device exhibits tunable synaptic functionalities, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and controllable memory transition processes. Moreover, the reservoir computing framework constructed on this device demonstrates a rich dynamic state space, achieving up to 93% accuracy in colored object recognition tasks. Furthermore, it effectively solves second-order nonlinear dynamical equations with a minimal normalized root-mean-square error of 4.19 × 10-4. This work establishes a material and device foundation for broadband neuromorphic visual perception and high-dimensional dynamic computing.

