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Updated: Jan 20, 2026
Transition Metals: Electron Configurations and Properties
Enhancing gas sensing and optoelectronic properties of rutile TiO2 via transition metal doping: a DFT + U study
Lemma Tirfie Zegbreal1,2, Newayemedhin Aberra1, David E Motaung3
1Department of Physics, Addis Ababa University P. O. Box: 1176 Addis Ababa Ethiopia fekadu.gashaw@aau.edu.et.
Abstract:
This research employs DFT + U calculations to investigate the impact of doping with Co, Ni, Cu, and Zn on the structural, electronic, optical, and gas sensing characteristics of rutile TiO2. The doping process results in lattice expansion, with optimized lattice constants increasing from 4.630 Å (a) and 2.980 Å (c) in pure TiO2 to as much as 4.681 Å and 3.143 Å in Zn-doped systems. This expansion is explained by the variation in atomic radii between Ti and the doped atoms. A reduction in the bandgap is noted across all doped systems (pure: 3.04 eV; Co: 2.51 eV; Cu: 2.63 eV; Ni: 2.66 eV; Zn: 2.56 eV), which enhances the absorption of visible light and promotes p-type conductivity. The analysis of the PDOS indicates significant hybridization among the Ti-3d, O-2p, and dopant 3d orbitals, as well as magnetic properties in the Co, Ni, and Cu-doped systems. The optical properties, including the dielectric function and absorption spectra, further indicate a redshift in all transition metal (TM) doped systems. The gas sensing evaluation shows enhanced detection of CO and NO, with Zn-doping achieving superior selectivity for CO with an adsorption energy of -0.949 eV, while Ni-doping demonstrates a strong affinity for both CO (-0.726 eV) and NO (-0.639 eV), making it suitable for multi-gas detection. Doped rutile TiO2 systems exhibit enhanced sensitivity, stability, and reusability, positioning them as promising candidates for optoelectronic and gas sensing applications.
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