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Updated: Jan 20, 2026
01:23
Induced Electric Fields
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Ultra-Low Electric Field Induced Volatile Resistive Switching in Hole-Doped MgTi2O4
Priyanka Maji1, Aminur Rahaman2, Jayjit Kumar Dey3
1Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal, India.
Advanced Materials (Deerfield Beach, Fla.)
|January 19, 2026
Summary
Researchers report low-threshold electric-field-induced resistive switching in MgTi2O4, a Mott insulator. This discovery advances mottronics and memristors, enabling volatile resistive switching (VRS) for potential neuromorphic circuits.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Device Physics
Background:
- Mott insulators exhibit electric-field-induced resistive breakdown, crucial for mottronics and memristors.
- Achieving low-threshold resistive switching in transition metal spinel oxides remains a challenge.
Purpose of the Study:
- To investigate electric-field-induced resistive breakdown in hole-doped MgTi2O4.
- To explore the potential of MgTi2O4 for low-threshold resistive switching applications.
Main Methods:
- Investigated hole-doped MgTi2O4 under DC current and electric fields.
- Measured resistive switching behavior at various temperatures.
- Analyzed switching mechanisms and device functionality.
Main Results:
- Observed reversible resistive breakdown with a low threshold field (~60 V/cm at 40 K).
- Demonstrated forming-free, stable, volatile resistive switching (VRS).
- Showcased leaky-integrate-fire behavior in a single-component device, mimicking artificial neuron functionality.
Conclusions:
- MgTi2O4 exhibits promising low-threshold resistive switching characteristics.
- The material's properties are suitable for developing advanced mottronics, memristors, and neuromorphic circuits.
- Polaronic hopping and collective charge excitation are identified as key mechanisms.
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