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d-Wave Flat Fermi Surface in Altermagnets Enables Maximum Charge-to-Spin Conversion.

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Altermagnets enable ultrafast spin-based electronics. Researchers found a link between Fermi surface geometry and spin currents, achieving record charge-to-spin conversion efficiency in KV2Se2O for advanced memory devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Altermagnets exhibit unique antiferromagnetic and ferromagnet-like properties, enabling ultrafast spin-dependent responses.
  • Conventional spin-transfer and spin-orbit torque methods face limitations in magnetic memory technologies.
  • Understanding spin-current generation in altermagnets is crucial for next-generation spintronics.

Purpose of the Study:

  • To establish a fundamental relationship between Fermi surface geometry and time-reversal-odd (T-odd) spin currents in altermagnets.
  • To explore the potential of altermagnets for efficient spin-current generation.
  • To investigate the charge-to-spin conversion efficiency (CSE) in a novel room-temperature altermagnet.

Main Methods:

  • Combined model analysis and first-principles calculations were employed.
  • Investigation focused on d-wave altermagnets with flat Fermi surfaces.
  • Experimental characterization of the newly discovered KV2Se2O altermagnet.

Main Results:

  • A theoretical charge-to-spin conversion efficiency (CSE) of 100% was demonstrated for d-wave altermagnets with flat Fermi surfaces.
  • The room-temperature altermagnetic metal KV2Se2O achieved a record T-odd CSE of ~78% at the charge neutrality point.
  • Electron doping in KV2Se2O further increased CSE to ~98%, approaching the theoretical limit.

Conclusions:

  • Fermi surface geometry engineering is a key factor in controlling T-odd spin currents in altermagnets.
  • KV2Se2O represents a significant advancement in altermagnetic materials for spintronics.
  • This research provides critical insights for developing high-performance altermagnet-based memory devices.