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Updated: Jan 22, 2026

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
Published on: May 11, 2019
Spin Decoherence Dynamics of Er^{3+} in CeO_{2} Films
Sagar Kumar Seth1,2, Jonah Nagura1, Vrindaa Somjit2
1University of Chicago, Pritzker School of Molecular Engineering, Chicago, Illinois 60637, USA.
None:
Developing telecom-compatible spin-photon interfaces is essential towards scalable quantum networks. Erbium ions (Er^{3+}) exhibit a unique combination of a telecom (1.5 μm) optical transition and an effective spin-1/2 ground state, but identifying a host that enables heterogeneous device integration while preserving long optical and spin coherence remains an open challenge. We explore the potential of Er^{3+}:CeO_{2} films on silicon and study the Er^{3+} spin coherence, offering low nuclear spin density and the potential for on-chip integration. We demonstrate a 38.8 μs spin coherence, which can be extended to 176.4 μs with dynamical decoupling. Pairing experiments with cluster correlation expansion calculations, we identify spectral diffusion induced by bath Er^{3+} spin flip-flops as the dominant decoherence mechanism and provide pathways to millisecond-scale coherence.
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