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Mechanism analysis and protection design of GaN HEMTs induced by high-power microwave pulse

Dong Xing1, Hongxia Liu1, Mengwei Su1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China.

Nanotechnology
|January 22, 2026
PubMed

Keywords:
damage effectgallium nitride (GaN) high electron mobility transistors (HEMTs)high-power microwave(HPM)

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