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Atomically tweaking spin-crossover cooperativity to augment molecular memory density.

Jing Liu1, Yuchen Bai2, Zhen Xu3,4

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Spin-crossover complexes can be used as molecular bits. Modifying their cooperative dynamics by engineering coordination fields allows for higher data storage density in molecular memory devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemistry

Background:

  • Spin-crossover (SCO) complexes offer magnetic bistability, making them suitable for molecular memory applications.
  • Cooperative switching dynamics in SCO aggregates pose challenges for achieving high-density data storage.
  • Developing strategies to control SCO cooperativity is crucial for advancing molecular bit technology.

Purpose of the Study:

  • To demonstrate coordination-field engineering as a method to modulate cooperative switching dynamics in surface-confined SCO chains.
  • To investigate the disruption of SCO cooperativity through hetero-metal/ligand doping.
  • To enhance bit density by creating independently switchable segments within SCO chains.

Main Methods:

  • Scanning tunneling microscopy/spectroscopy (STM/STS) for surface analysis.
  • Density functional theory (DFT) for computational modeling.
  • Coordination-field engineering via hetero-metal/ligand doping.

Main Results:

  • Coordination-field modification effectively disrupts SCO cooperativity in surface-confined chains.
  • Non-switchable nodes created by doping divide SCO chains into independently switchable segments.
  • Erasable, one-by-one write-in of SCO bits was achieved using STM tip manipulation.

Conclusions:

  • Coordination-field engineering is a viable strategy to control SCO dynamics for high-density memory.
  • Disrupting cooperativity by introducing non-switchable nodes increases bit density.
  • Precise control over SCO aggregates advances their application in molecular data storage.