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Published on: December 7, 2017
Ga-Assisted Free-Standing Growth of CsPbBr3 Nanowires for High-Performance Optoelectronic Applications
Qingbo Liu1, Qian Li2, Sihao Huang2
1Anhui Province Key Laboratory of Intelligent Computing and Applications, College of Physics and Electronic Engineering, Huaibei Normal University, Huaibei, China.
Abstract:
1D CsPbBr3 nanowires have attracted considerable interest in optoelectronics due to their high carrier mobility, high absorption efficiency, and intrinsic anisotropy. However, conventional synthesis methods typically grow in-plane along the substrate, which makes it challenging to physically transfer them to functional substrates for optoelectronic device applications. Here, we successfully achieve direct growth free-standing CsPbBr3 nanowires using Ga metal as a growth assistant, which can be readily transferred to arbitrary substrates. Benefiting from the natural cavity, the transferred CsPbBr3 nanowire exhibited a single-mode laser with a remarkable polarization ratio of 0.908. Furthermore, we constructed a nanowire-based photodetector, which demonstrated a low dark current (0.1 pA at 1 V), a fast response time (451 and 676 µs for rise/fall time), and excellent environmental stability. These results reveal the promise of free-standing nanowires for polarized optoelectronics and provide a versatile platform for developing high-performance photodetectors and other nanoscale optoelectronic devices.
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