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Updated: Jan 28, 2026

Designing Porous Silicon Films as Carriers of Nerve Growth Factor
Published on: January 25, 2019
Oxidation of Amorphous Porous VOx at Low Temperatures for the Formation of Thermochromic VO2 Films
Hiedra Acosta-Rivera1, Victor Rico1, Francisco Javier Ferrer2,3
1Instituto de Ciencia de Materiales de Sevilla, Consejo Superior de Investigaciones Científicas-Universidad de Sevilla (CSIC-US), Américo Vespucio 49, E-41092 Seville, Spain.
Abstract:
Thermochromic VO2 crystalline domains have been formed in amorphous nanocolumnar VOx films by means of a low-temperature oxidation process. The oxidation of an amorphous film with [O]/[V] below 1.9 favors the formation of VO2, V3O7, and V2O5 crystalline domains in the material for temperatures as low as 260 °C, while values above 1.9 lead to the sole formation of the V2O5 phase. It is found that the absorption of oxygen also causes a relevant film volume expansion that makes pores shrink. Under some specific conditions, low-temperature oxidation causes the near disappearance of the amorphous regions, clearly improving the overall transparency and optimizing the optical and electrical modulation capabilities associated with the presence of crystalline VO2 domains. The best thermochromic performance was found when the original stoichiometry was [O]/[V] = 1.5 and the oxidation temperature was 280 °C. These conditions yield a relatively transparent coating in the visible range that presents an optical modulation in the near-infrared range of nearly 50% and a drop of electrical resistivity of more than two orders of magnitude, with a transition temperature of 50.3 °C. A tentative model based on the volume expansion experienced by the film upon oxidation is proposed, which links the structural/chemical features of the material and the formation of the crystalline domains at such relatively low temperatures.
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