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Updated: Jan 29, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
Narrowband quantum emitters in hexagonal boron nitride with optically addressable spins.
Benjamin Whitefield1,2, Helen Zhi Jie Zeng1, James Liddle-Wesolowski1,2
1School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Australia.
Researchers developed a simple thermal method to create high-quality quantum emitters in hexagonal boron nitride. These emitters show optically active spin transitions, crucial for advancing quantum technologies like sensing and information processing.
Area of Science:
- Solid-state physics
- Quantum technology
- Materials science
Background:
- Electron spins coupled with optical transitions are key for quantum technologies.
- Hexagonal boron nitride (hBN) is a promising host for spin systems.
- Controlled generation of single-photon emitters in hBN remains a challenge.
Purpose of the Study:
- To develop a method for controlled generation of isolated single-photon emitters in hBN.
- To investigate the spin transitions of these emitters.
- To enable single spin-photon interfaces in layered materials.
Main Methods:
- Single-step thermal processing of hexagonal boron nitride flakes.
- Characterization of quantum emitters and their spin transitions.
- Optical spin read-out measurements at room temperature.
Main Results:
- High-density, narrowband quantum emitters produced.
- Over 25% of emitters showed optical spin read-out at room temperature.
- Spin defect complexes exhibited S=1 and S=1/2 transitions, explained by charge transfer.
Conclusions:
- The thermal processing method enables controlled generation of spin defect complexes in hBN.
- Understanding of spin complexes in hBN is advanced.
- Paves the way for spin-photon interfaces in layered materials for quantum applications.
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