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Updated: Jan 29, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
Published on: July 30, 2013
Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems
Alina Domanowska1, Bogusława Adamowicz1
1Institute of Physics-CSE, Silesian University of Technology, S. Konarskiego 22B, 44-100 Gliwice, Poland.
Abstract:
This review summarizes the use of Auger Electron Spectroscopy (AES) for microchemical analysis of two different types of dielectric/(Al,Ga)N-based systems: (i) extrinsic dielectric PECVD SiO2, ALD Al2O3, and ECR-CVD SiNx films on AlxGa1-xN/GaN structures in the context of their application in microelectronic power devices and (ii) intrinsic Al2O3 films on AlN epitaxial layers grown by high-temperature oxidation for nanostructured technology of various gas/ion sensors. Particular attention is given to AES depth profiling across complete multilayer cross-sections, combining qualitative analysis of spectral line shape and intensity evolution as well as kinetic energy shifts with quantitative elemental depth distributions. This approach enables identification of chemical states and oxidation-related transformations at dielectric/semiconductor interfaces. Reported results demonstrate that AES provides micro- to nanometer-scale chemical information essential for distinguishing interfacial from the bulk properties. The capabilities and inherent limitations of AES depth profiling, including sputter-induced artifacts are also addressed, highlighting the role of optimized experimental conditions in reliable interface analysis.
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