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Author Spotlight: Simulation and Analysis of the Temperature Rise of Ring Main Unit Equipment
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A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability.

Zhuowen Feng1, Pengyu Lai1, Abu Shahir Md Khalid Hasan1

  • 1Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA.

Materials (Basel, Switzerland)
|January 28, 2026
PubMed
Summary

This study introduces a new simulation method to assess the reliability of silicon carbide (SiC) power converters. SiC devices show better thermal stability but are sensitive to radiation, impacting long-term performance.

Keywords:
gate oxide degradationresonant convertersilicon carbide power devicestemperature-sensitive electrical parameters (TSEPs)total ionizing doses (TIDs)

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Area of Science:

  • Power Electronics
  • Materials Science
  • Reliability Engineering

Background:

  • Silicon carbide (SiC) power converters are vital for modern applications like automotive and renewable energy.
  • Current reliability assessments often focus on device or system levels, neglecting an integrated approach.
  • An integrative reliability assessment for SiC power devices and converters is crucial but underexplored.

Purpose of the Study:

  • To develop and present a novel system-level simulation method for evaluating SiC power device and resonant converter reliability.
  • To analyze the impact of varying temperatures and total ionizing doses (TIDs) on SiC power converter performance.
  • To compare the reliability of Silicon (Si) and SiC-based power converters for space and harsh environment applications.

Main Methods:

  • Calibrated temperature-sensitive electrical parameters (TSEPs) like on-state resistance (RON) and threshold voltage shift (ΔVTH) using a B1505A curve tracer.
  • Developed a system-level simulation incorporating TSEPs for a 300 W resonant converter with a boosting cell.
  • Evaluated Si and SiC-based converters under thermal and radiation (TID) stress using two distinct simulation strategies.

Main Results:

  • SiC MOSFETs demonstrated superior thermal stability with more consistent conduction losses at elevated temperatures due to high thermal conductivity.
  • Increased total ionizing doses (TIDs) negatively impacted conduction losses in SiC devices, indicating potential long-term reliability concerns under radiation.
  • The simulation highlighted gate-oxide degradation and ΔVTH shifts as key factors affecting SiC device performance.

Conclusions:

  • The proposed integrative simulation method effectively assesses SiC power converter reliability under combined thermal and radiation stresses.
  • SiC technology offers significant advantages in thermal management but requires careful consideration of radiation effects for space and harsh environments.
  • Further research into mitigating TID-induced degradation is essential for enhancing the long-term reliability of SiC power converters.