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Loading-Controlled Photoactivity in TiO2@BiVO4 Heterostructures
Małgorzata Knapik1, Wojciech Zając2, Agnieszka Wojteczko1
1Faculty of Materials Science and Ceramics, AGH University of Krakow, Al. Mickiewicza 30, 30-059 Krakow, Poland.
Molecules (Basel, Switzerland)
|January 28, 2026
Summary
This study shows that bismuth vanadate (BiVO4) nanoparticle structure on titanium dioxide (TiO2) photoanodes significantly impacts UV and visible light absorption and charge separation for enhanced photoelectrochemical performance.
Area of Science:
- Materials Science
- Nanotechnology
- Photochemistry
Background:
- Titanium dioxide (TiO2) is a widely studied semiconductor for photoanodes.
- Bismuth vanadate (BiVO4) is a promising material for visible light absorption.
- Heterostructures of TiO2/BiVO4 offer potential for improved photoelectrochemical performance.
Purpose of the Study:
- To investigate the effect of BiVO4 nanoparticle amount and form on TiO2 photoanodes.
- To understand the influence of annealing temperature on BiVO4 phase and optical properties.
- To correlate photoanode morphology with photocurrent response under UV and visible light.
Main Methods:
- Preparation and annealing of BiVO4 nanopowders at various temperatures (200–500 °C).
- Deposition of BiVO4 on nanostructured TiO2 via drop-casting and successive ionic layer adsorption and reaction (SILAR).
- Structural, optical, and photoelectrochemical characterization of TiO2/BiVO4 heterostructures.
Main Results:
- Annealing temperature influences BiVO4 phase transition and visible light absorption.
- Morphology of BiVO4 on TiO2 affects photocurrent response under UV and visible light.
- TiO2@d photoanode showed high relative visible light activity but suffered from transport losses.
Conclusions:
- BiVO4 nanoparticle presence on TiO2 significantly influences charge separation and photon utilization.
- Optimizing BiVO4 morphology is crucial for efficient charge transfer and reduced recombination.
- Understanding band alignment and charge transfer mechanisms in TiO2/BiVO4 heterostructures is key for device performance.
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