Group Polarization
Switching of BJT
Molecular Shape and Polarity
System of Memory
Working Memory
Polar Coordinates
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Jingjie Niu1,2, Jiahui Lyu1,2, Jie Li3
1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, South Korea.
This study demonstrates all-optical memory using a novel heterostructure for energy-efficient computing. Bidirectional polarization switching enables nonvolatile memory and neuromorphic functions, paving the way for advanced optical processors.
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