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Updated: Jan 31, 2026

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
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Nanoindentation-induced subsurface phase engineering in oxide-capped silicon.

Megha Sasidharan Nisha1, Kiran Mangalampalli2

  • 1Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur-603203, Tamil Nadu, India. ms8267@srmist.edu.in.

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Summary

Controlled silicon phase engineering under an oxide layer is achieved by optimizing nanoindentation. Spherical indentation, within a critical load window, enables ordered crystalline recovery for advanced silicon devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Subsurface phase engineering in silicon offers new possibilities for electronic devices.
  • Controlled formation of high-pressure silicon polymorphs beneath an oxide layer is a novel approach.
  • Understanding the influence of contact geometry and oxide constraint is crucial.

Purpose of the Study:

  • To compare sharp Berkovich and spherical nanoindentation for silicon phase transformation.
  • To investigate how contact geometry and oxide constraint govern subsurface phase engineering.
  • To identify optimal conditions for controlled crystalline phase formation in silicon.

Main Methods:

  • Systematic comparison of sharp and spherical nanoindentation on SiO2-capped Si(100).
  • Utilized Raman spectroscopy and cross-sectional electron microscopy for analysis.
  • Investigated phase transformation under varying indentation loads.

Main Results:

  • Sharp indentation initiated phase transformation at lower loads but caused oxide fracture.
  • Spherical indentation delayed transformation but distributed stress more uniformly.
  • A critical loading window was identified for optimized crystalline recovery, with moderate loads yielding ordered phases and excessive loads causing amorphous collapse.

Conclusions:

  • The oxide layer modulates stress-relaxation kinetics without changing the fundamental transformation pressure.
  • Contact geometry and oxide constraint critically influence subsurface silicon phase formation.
  • This work provides a pathway for engineering silicon crystalline phases for photonic and sensing applications.