Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Areas Within Irregular Boundaries01:26

Areas Within Irregular Boundaries

382
Calculating areas within irregular boundaries, such as along rivers or curved roads, is crucial in various fields, including surveying, engineering, and environmental management. Surveyors often begin by creating a traverse, a connected series of straight lines approximating the area's boundary. The coordinates of each traverse point are essential for calculating the enclosed area. The double meridian distance formula is a widely used technique for this purpose. This method utilizes the...
382
Semiconductors01:22

Semiconductors

1.5K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.5K
Types of Semiconductors01:20

Types of Semiconductors

1.4K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.4K
Polymer Classification: Crystallinity01:21

Polymer Classification: Crystallinity

4.0K
Unlike ionic or small covalent molecules, polymers do not form crystalline solids due to the diffusion limitations of their long-chain structures. However, polymers contain microscopic crystalline domains separated by amorphous domains.
Crystalline domains are the regions where polymer chains are aligned in an orderly manner and held together in proximity by intermolecular forces. For example, chains in the crystalline domains of polyethylene and nylon are bound together by van der Waals...
4.0K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

991
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
991
Impact of Individuals on Individuals01:30

Impact of Individuals on Individuals

382
Human behavior is intricately shaped by social influences that arise from interactions with others in diverse contexts. These influences not only mold beliefs and attitudes but also drive the regulation of behaviors through both direct communication and observational learning. The study of these processes falls within the domain of social psychology, which seeks to understand how individuals are affected by and affect those around them.Mechanisms of Social InfluenceDirect social influence...
382

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Colorimetric correction of electrocatalytic urea quantification.

Nature communications·2026
Same author

Magnetic-Field-Enabled Ultrafast Quench Synthesis of Single-Atom Catalysts for Efficient Anion Exchange Membrane Water Electrolysis.

Angewandte Chemie (International ed. in English)·2026
Same author

Discovery of a Robust Single-Atom Ruthenium Emission Control Catalyst.

Angewandte Chemie (International ed. in English)·2026
Same author

Single Atom Ru Doped CuTi Nanozyme with Precisely Programmed Cascade Catalysis for Amplified Oral Cancer Therapy.

ACS nano·2026
Same author

Bipolar Electrochemiluminescence at Single Gold Microbeads Trapped by Micropipettes.

Chemical & biomedical imaging·2026
Same author

Asymmetric Ru─O sites in self-activated catalysts for efficient electrochemical methanol oxidation and industrial-scale hydrogen generation.

Science advances·2026

Related Experiment Video

Updated: Feb 3, 2026

Author Spotlight: Development and Application of SERS Flexible Substrates Using Synthesized AgNPs
03:33

Author Spotlight: Development and Application of SERS Flexible Substrates Using Synthesized AgNPs

Published on: November 17, 2023

3.3K

Individual Single-Crystalline Irregular In2O3 Microcavity for Ultrasensitive Semiconductor-Based SERS Biosensor.

Mengyang Zhang1,2, Jiayi Li1, Wei Cao3

  • 1Collaborative Innovation Center of Biomedical Functional Materials of Jiangsu Province, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing, China.

Advanced Materials (Deerfield Beach, Fla.)
|February 2, 2026
PubMed
Summary

Researchers developed a new ultrasensitive semiconductor SERS sensor using irregular hexagonal prism Indium Oxide (I-In2O3) microcavities. This novel platform enhances light-matter interactions for precise molecular detection without relying on gap-enhanced fields.

Keywords:
In2O3 microcavityantibiotic detectionlattice‐strainsingle‐particle SERSwhispering‐gallery mode

More Related Videos

Ultrasensitive Detection of Biomarkers by Using a Molecular Imprinting Based Capacitive Biosensor
08:22

Ultrasensitive Detection of Biomarkers by Using a Molecular Imprinting Based Capacitive Biosensor

Published on: February 16, 2018

12.6K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K

Related Experiment Videos

Last Updated: Feb 3, 2026

Author Spotlight: Development and Application of SERS Flexible Substrates Using Synthesized AgNPs
03:33

Author Spotlight: Development and Application of SERS Flexible Substrates Using Synthesized AgNPs

Published on: November 17, 2023

3.3K
Ultrasensitive Detection of Biomarkers by Using a Molecular Imprinting Based Capacitive Biosensor
08:22

Ultrasensitive Detection of Biomarkers by Using a Molecular Imprinting Based Capacitive Biosensor

Published on: February 16, 2018

12.6K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.4K

Area of Science:

  • Materials Science
  • Spectroscopy
  • Nanotechnology

Background:

  • Surface-enhanced Raman spectroscopy (SERS) offers high sensitivity and water-interference-free detection.
  • Developing single-particle semiconductor SERS substrates without gap-enhancement is a key challenge.

Purpose of the Study:

  • To create an ultrasensitive semiconductor SERS system using a novel microcavity structure.
  • To investigate the role of morphology and interfacial charge transfer in enhancing SERS performance.

Main Methods:

  • Fabrication of highly crystalline irregular hexagonal prism Indium Oxide (I-In2O3) microcavities.
  • Finite-difference time-domain simulations and photoluminescence spectroscopy to confirm microcavity formation.
  • Aberration-corrected electron microscopy and density functional theory calculations to analyze material structure and electronic properties.

Main Results:

  • Confirmed whispering-gallery-mode microcavity formation on the I-In2O3 platform, enhancing light confinement.
  • Observed contracted lattice parameters and electronic band restructuring in I-In2O3 due to compressive lattice strain.
  • Demonstrated quantitative and multiplexing capabilities for rapid antibiotic detection using the I-In2O3 SERS system.

Conclusions:

  • The I-In2O3 microcavity platform enables ultrasensitive, single-particle SERS detection.
  • Morphology-induced light accumulation and strain-improved charge transfer are crucial for enhanced SERS.
  • This work provides a new approach for developing supersensitive semiconductor SERS sensors.