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Updated: Feb 4, 2026

Flash Infrared Annealing for Perovskite Solar Cell Processing
Published on: February 3, 2021
Heterodimensional Interface for Improved Photovoltage and Stability in Narrow Bandgap Sn-Pb Perovskite Solar Cells
Seongju Park1, Seongheon Kim2, Yeongyu Kim1
1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
Abstract:
Sn-Pb perovskite solar cells (PSCs) are considered promising candidates for the bottom subcell in all‑perovskite tandem solar cells, due to their low bandgap and potential to approach the Shockley-Queisser limit. However, their practical application is hindered by the facile oxidation of Sn2+ ions and high trap densities. Here, we introduce FA2SnI6 vacancy‑ordered double perovskite (FADP) with excellent stability under environmental conditions, to fabricate highly efficient and stable FA0.7MA0.3Sn0.5Pb0.5I3 Sn-Pb PSCs. A heterodimensional interface is constructed between the Sn-Pb perovskite and the electron transport layer (ETL) by incorporating FADP, which effectively passivates interfacial defects and suppresses non‑radiative recombination, leading to a remarkable enhancement in open‑circuit voltage (VOC). Furthermore, the n‑type nature of FADP induces favorable band alignment at the Sn-Pb perovskite/ETL interface, and its environmental robustness contributes directly to enhanced device stability. As a result, the champion Sn-Pb PSC achieved a power‑conversion efficiency (PCE) of 22.21% and maintained 91% of its initial PCE after 600 h of storage under nitrogen, highlighting the potential applicability of FADP.
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