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Updated: Feb 6, 2026

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A Self-Powered Polarization-Sensitive Neuromorphic Vision Device Enabled by Laser-Induced Symmetry Engineering.

Jin Peng1,2, Guisheng Zou1,2, Zehua Li1,2

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Summary

Researchers developed a novel laser process to create a self-powered, polarization-sensitive vision device. This multifunctional neuromorphic device integrates energy harvesting, sensing, and computation for advanced edge computing applications.

Keywords:
femtosecond laserphysical reservoirpolarization-sensitiveself-poweredsymmetry engineering

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Edge Computing

Background:

  • Edge computing demands multifunctional devices integrating energy harvesting, sensing, and computation.
  • Current approaches often involve complex configurations for single-device functionality.

Purpose of the Study:

  • To develop a facile method for fabricating a self-powered, polarization-sensitive neuromorphic vision device.
  • To address the challenge of creating intrinsic multifunctional devices for edge computing.

Main Methods:

  • Fabrication of a MoTe2-based architecture using ultrafast laser-induced symmetry engineering (LISE).
  • Engineering localized phase transitions for simultaneous energy band and crystal structure symmetry modification.
  • Utilizing photovoltaic volatile memory in an engineered FeFET for reservoir computing.

Main Results:

  • Achieved simultaneous symmetry engineering of energy bands and crystal structures via LISE.
  • Demonstrated a self-powered device with built-in photovoltaic effect and polarization sensitivity.
  • Implemented fully self-powered, all-optical reservoir computing for underwater imaging using the device.

Conclusions:

  • The LISE process enables the creation of high-performance multifunctional neuromorphic systems.
  • Ultrafast lasers are effective tools for manipulating material properties for advanced device applications.
  • The developed device offers a powerful hardware-level method for tuning computation via light polarization and gate voltage.