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  3. Highly Selective H2s Gas Sensing Based On Inas-znse Core-shell Quantum Dots.
  1. Home
  3. Highly Selective H2s Gas Sensing Based On Inas-znse Core-shell Quantum Dots.

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Highly Selective H2S Gas Sensing Based on InAs-ZnSe Core-Shell Quantum Dots.

Anh-Duy Nguyen1, Hossein Roshan2, Guncem Ozgun Eren2

  • 1Department of Materials Science and Engineering, Inha University, Incheon 22212, South Korea.

ACS Sensors
|February 5, 2026

View abstract on PubMed

Summary
This summary is machine-generated.

Colloidal Indium Arsenide (InAs) quantum dots offer a low-cost alternative for gas sensors. Coating InAs quantum dots with Zinc Selenide (ZnSe) significantly enhances their stability and H2S gas-sensing performance.

Keywords:
H2S gasInAsZnSecolloidal quantum dotcore-shellgas sensor

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Conventional Indium Arsenide (InAs) gas sensors use expensive epitaxial methods, limiting research and low-cost manufacturing.
  • Developing cost-effective and scalable synthesis routes for InAs-based gas sensors is crucial.

Purpose of the Study:

  • To investigate the gas-sensing properties of colloidal Indium Arsenide (InAs) quantum dots (QDs).
  • To explore the impact of a Zinc Selenide (ZnSe) shell on the stability and sensing performance of InAs QDs.
  • To establish a low-cost fabrication pathway for III-V semiconductor-based gas sensors.

Main Methods:

  • Synthesis of colloidal InAs QDs using a cost-effective hot-injection chemical route.
  • Fabrication of InAs-ZnSe core-shell QDs by growing a ZnSe shell over InAs QDs.
  • Evaluation of gas-sensing properties, specifically the response to Hydrogen Sulfide (H2S) gas.

    • Main Results:

    • Colloidal InAs QD-based sensors exhibited a response of 2.97 to 50 ppm H2S.
    • InAs-ZnSe core-shell QD sensors showed a significantly enhanced response of 26 to 50 ppm H2S.
    • The ZnSe shell improved QD chemical stability and sensing performance.

    Conclusions:

    • Colloidal InAs QDs are feasible for gas-sensing applications.
    • The InAs-ZnSe core-shell structure offers a promising low-cost, high-performance gas sensor solution.
    • This work presents a scalable and accessible alternative to traditional epitaxial methods for III-V semiconductor sensors.