Dry development in lithography: Molecular design and chemical strategies

Dry development is reshaping (photo)lithography by addressing issues inherent to wet development, such as pattern collapse and chemical waste. This review highlights recent advances in dry development for both positive- and negative-tone resists, with a particular focus on how molecular design and chemical reactivity govern selectivity and pattern fidelity. Strategies including thermal depolymerization, laser-induced volatilization, plasma etching, and gas-phase ligand exchange are examined through their chemical mechanisms, structure-property relationships, and compatibility with resist design. By replacing liquid developers, dry development facilitates high-resolution, low-defect patterning, which is especially critical for sub-10 nm nodes and innovative nanopatterning techniques such as extreme ultraviolet (EUV) lithography. A comparative analysis outlines each method's strengths and trade-offs, offering guidance for designing next-generation dry-processable resists.