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Microscale PN Junctions by In Situ Sb Doping for High-Performance PbS Infrared Photodetectors.

Yikai Wang1, Sen Li2,3, Ruofeng Liu2

  • 1School of Integrated Circuits, Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, China.

ACS Applied Materials & Interfaces
|February 11, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel room-temperature antimony (Sb) doping method for lead sulfide (PbS) infrared photodetectors. This technique enhances performance by reducing dark current and improving charge separation, paving the way for advanced uncooled optoelectronic devices.

Keywords:
chemical bath depositionin situ dopinginfrared photodetectorslead sulfidemicroscale PN junctionssacrificial anode

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Room-temperature uncooled infrared photodetectors are crucial for military, environmental, and automotive applications.
  • Chemical bath deposition (CBD) of lead sulfide (PbS) is cost-effective but limited by oxygen doping and high-temperature sensitization.
  • Existing methods face challenges in device performance and integration due to inherent limitations.

Purpose of the Study:

  • To develop a room-temperature, one-step growth method for high-quality PbS films.
  • To overcome the limitations of traditional CBD methods for PbS photodetectors.
  • To engineer PbS photodetectors with enhanced performance characteristics.

Main Methods:

  • An in situ antimony (Sb) doping strategy was employed for one-step PbS film growth at room temperature.
  • The Sb dopant acted as a sacrificial anode, passivating surfaces and suppressing oxygen incorporation.
  • This process created n-type PbS domains, forming spontaneous built-in microscale PN junctions.

Main Results:

  • Achieved high-quality PbS films with significantly reduced dark current.
  • Demonstrated a fast average response time of 39.25 μs.
  • Obtained a high specific detectivity of 5.36 × 10^10 Jones at 2.6 μm, comparable to commercial devices.
  • The optimized Sb-doped PbS photodetector exhibited a low dark current of 0.21 mA at 1 V.

Conclusions:

  • The in situ Sb doping approach enables superior room-temperature fabrication of PbS photodetectors.
  • This method effectively reduces dark current and enhances charge separation via built-in PN junctions.
  • Pioneered a general pathway for engineering complex optoelectronic structures in solution-processed semiconductors.