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Two-Dimensional Multiferroic Tunnel Junctions Based on Janus Ferroelectric Materials.

Hongjian Li1, Hua Bai1, Shiqian Hu2

  • 1Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China.

ACS Applied Materials & Interfaces
|February 12, 2026
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Summary
This summary is machine-generated.

This study presents a novel design for two-dimensional multiferroic tunnel junctions (MFTJs) that overcomes limitations in existing devices. The new MFTJs achieve high tunneling electroresistance (TER) and tunneling magnetoresistance (TMR) simultaneously with a low resistance-area product.

Keywords:
Janus ferroelectric materialsfirst-principles calculationmultiferroic tunnel junctiontunneling electroresistancetunneling magnetoresistance

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) multiferroic tunnel junctions (MFTJs) show promise for applications but face challenges.
  • Existing 2D MFTJs struggle to achieve high tunneling electroresistance (TER) and tunneling magnetoresistance (TMR) concurrently with a low resistance-area (RA) product.
  • High RA products limit conductance variation, and some MFTJs have insufficient magnetic layer phase transition temperatures.

Purpose of the Study:

  • To theoretically construct novel 2D MFTJs that overcome the limitations of current devices.
  • To achieve simultaneous high TER, high TMR, and low RA product.
  • To provide theoretical guidance for developing high-performance 2D MFTJs.

Main Methods:

  • Theoretical construction of MFTJs using Janus ferroelectric materials (α-In2S2Se and α-In2SSe2) as the insulating layer.
  • Incorporation of a high Curie temperature ferromagnetic material (Fe3GaTe2) on both sides of the insulating layer.
  • Calculation of TER, TMR, RA product, and conductance variations under zero and nonzero bias.

Main Results:

  • Achieved a maximum TER of 136% and a maximum TMR of 523% with a minimum RA product of 0.06 Ω·μm² at zero bias.
  • Maximum conductance variation due to polarization reversal (ΔGP) reached 1.02 μS.
  • Maximum conductance variation due to magnetization configuration change (ΔGM) reached 1.70 μS.
  • Calculated property variations under nonzero bias.

Conclusions:

  • The proposed MFTJ design successfully integrates high TER, high TMR, and low RA product.
  • This strategy offers a new pathway for realizing the TER effect in 2D MFTJs.
  • The findings provide valuable theoretical insights for the development of next-generation 2D MFTJs with enhanced performance.